公开(公告)号：US20220139833A1

公开(公告)日：2022-05-05

申请号：US17569831

申请日：2022-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Liang Chen ,  Chun-Yen Yeh ,  Yu-Hsin Fang ,  Han-Tang Lo

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes: a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and an isolation layer comprising a first portion and a second portion, wherein the first portion of the isolation layer lines the sidewalls of the first portion of the first conductive structure, and the second portion of the isolation layer lines at least a portion of the bottom surface of the first portion of the first conductive structure.