公开(公告)号：US20240128261A1

公开(公告)日：2024-04-18

申请号：US18128129

申请日：2023-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Chiang KUO ,  Yu-Hsin Fang ,  Min-Hsiung Chen

IPC: H01L27/08 ,  H01L21/3213 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L27/0805 ,  H01L21/32131 ,  H01L21/4853 ,  H01L21/56 ,  H01L22/14 ,  H01L22/32 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/49838 ,  H01L28/40

Abstract: A structure and method for improving manufacturing yield of passive device dies are disclosed. The structure includes first and second groups of capacitors disposed on a substrate, an interconnect structure disposed on the first and second groups of capacitors, first and second bonding structures disposed on the first and second conductive lines, respectively, and first and second measurement structures connected to the first and second conductive lines, respectively, and configured to measure electrical properties of the first and second groups of capacitors, respectively. The interconnect structure includes first and second conductive line connected to the first and second groups of trench capacitors, respectively. The first bonding structure is electrically connected to the first group of capacitors and the second bonding structure is electrically isolated from the first and second groups of capacitors. The first and second measurement structures are electrically isolated from each other.

公开(公告)号：US20220139833A1

公开(公告)日：2022-05-05

申请号：US17569831

申请日：2022-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Liang Chen ,  Chun-Yen Yeh ,  Yu-Hsin Fang ,  Han-Tang Lo

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes: a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and an isolation layer comprising a first portion and a second portion, wherein the first portion of the isolation layer lines the sidewalls of the first portion of the first conductive structure, and the second portion of the isolation layer lines at least a portion of the bottom surface of the first portion of the first conductive structure.