公开(公告)号：US10950728B2

公开(公告)日：2021-03-16

申请号：US15964742

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Huai Chang ,  Chao-Hsun Wang ,  Kuo-Yi Chao ,  Mei-Yun Wang

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L21/8238

Abstract: A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure and an S/D contact structure formed over the fin structure. The FinFET device structure also includes an S/D conductive plug formed over the S/D contact structure, and the S/D conductive plug includes a first barrier layer and a first conductive layer. The FinFET device structure includes a gate contact structure formed over the gate structure, and the gate contact structure includes a second barrier layer and a second conductive layer. The FinFET device structure includes a first isolation layer surrounding the S/D conductive plug, and the first barrier layer is between the first isolation layer and the first conductive layer. A second isolation layer surrounding the gate contact structure, and the second barrier layer is between the second isolation layer and the second conductive layer.