公开(公告)号：US20190341473A1

公开(公告)日：2019-11-07

申请号：US16511719

申请日：2019-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng YUAN ,  Hung-Ming CHEN ,  Tsung-Lin LEE ,  Chang-Yun CHANG ,  Clement Hsingjen WANN

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/308

Abstract: The fin structure includes a first portion and a second, lower portion separated at a transition. The first portion has sidewalls that are substantially perpendicular to the major surface of the substrate. The lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width.