公开(公告)号：US12087692B2

公开(公告)日：2024-09-10

申请号：US15940145

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Joung-Wei Liou ,  Greg Huang

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53295 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76843 ,  H01L23/53209

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interlayer dielectric (ILD) layer in a semiconductor device. In one example, the ILD layer is over a substrate and includes a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa. The semiconductor device also includes an interconnect formed in the ILD layer.

公开(公告)号：US20220367380A1

公开(公告)日：2022-11-17

申请号：US17875206

申请日：2022-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Joung-Wei LIOU ,  Greg Huang

IPC: H01L23/532 ,  H01L21/768

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interlayer dielectric (ILD) layer in a semiconductor device. In one example, the ILD layer is over a substrate and includes a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa. The semiconductor device also includes an interconnect formed in the ILD layer.

公开(公告)号：US20190096820A1

公开(公告)日：2019-03-28

申请号：US15940145

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Joung-Wei LIOU ,  Greg Huang

IPC: H01L23/532 ,  H01L21/768

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interlayer dielectric (ILD) layer in a semiconductor device. In one example, the ILD layer is over a substrate and includes a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa. The semiconductor device also includes an interconnect formed in the ILD layer.