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公开(公告)号:US20130254726A1
公开(公告)日:2013-09-26
申请号:US13902102
申请日:2013-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chin-Chang HSU , Ying-Yu SHEN , Wen-Ju YANG , Hsiao-Shu CHAO , Yi-Kan CHENG
IPC: G06F17/50
Abstract: A method includes receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool. The layout includes a plurality of polygons to be formed in the DPT-layer by a multi-patterning process. First and second ones of the plurality of polygons to be formed using first and second photomasks, respectively are identified. Any intervening polygons along a first path connecting the first polygon to the second polygon, and separator regions between adjacent polygons along the first path are identified. The separator regions have sizes less than a minimum threshold distance between polygons formed on the first photomask. The separator regions are counted. A multi-patterning conflict is identified, if the count of separator regions is even, prior to assigning all remaining ones of the plurality of polygons to the first or second masks.
Abstract translation: 一种方法包括接收表示由位置和路线工具生成的集成电路的DPT层的布局的数据。 该布局包括通过多图案化工艺在DPT层中形成的多个多边形。 分别使用第一和第二光掩模形成的多个多边形中的第一和第二多边形。 识别沿着连接第一多边形到第二多边形的第一路径以及沿着第一路径的相邻多边形之间的分隔区域的任何中间多边形。 分离器区域具有小于形成在第一光掩模上的多边形之间的最小阈值距离的尺寸。 计数分离器区域。 在将所述多个多边形中的所有剩余的多边形分配给第一或第二掩模之前,如果分离器区域的计数是偶数,则识别多图案化冲突。
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公开(公告)号:US20130239070A1
公开(公告)日:2013-09-12
申请号:US13867154
申请日:2013-04-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Cheng-I HUANG , Hsiao-Shu CHAO , Yi-Kan CHENG
IPC: G06F17/50
CPC classification number: G06F17/50 , G03F1/36 , G03F1/38 , G06F17/5081 , G06F2217/84 , H01L27/0207
Abstract: A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns.
Abstract translation: 一种方法包括使用电子设计自动化工具执行位置和路线操作,以产生用于形成半导体器件的电路图案的光掩模的初步布局。 位置和路线操作受到多个单一图案化间隔物技术(SPST)路由规则约束。 使用RC提取工具在EDA工具内模拟虚拟导电填充图案,以预测要添加到光掩模的初步布局的虚拟导电填充图案的位置和大小。 基于初步布局和仿真虚拟导电填充图案,在EDA工具中执行电路图案的RC定时分析。
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