公开(公告)号：US20170069670A1

公开(公告)日：2017-03-09

申请号：US15356578

申请日：2016-11-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Hung CHEN ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Alexander KALNITSKY ,  Wen-De WANG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L21/76232 ,  H01L21/764 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683

Abstract: An image sensor device includes a substrate having a front surface and a back surface, and a deep trench disposed at the front surface of the substrate. The deep trench has sidewalls, a bottom and an opening. A dielectric layer is disposed along the sidewalls and the bottom of the deep trench. An epitaxial layer is disposed on the front surface of the substrate. The deep trench and the epitaxial layer collectively define an air chamber. The deep trench has a chamfered portion at an interface between the epitaxial layer and the front surface of the substrate. The chamfered portion is free of dielectric layer.

Abstract translation: 图像传感器装置包括具有前表面和后表面的基底以及设置在基底的前表面的深沟槽。 深沟槽具有侧壁，底部和开口。 电介质层沿着深沟槽的侧壁和底部设置。 外延层设置在基板的前表面上。 深沟槽和外延层共同限定了一个空气室。 深沟槽在外延层和衬底的前表面之间的界面处具有倒角部分。 倒角部分没有电介质层。

公开(公告)号：US20190088610A1

公开(公告)日：2019-03-21

申请号：US15707145

申请日：2017-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsiang TSAI ,  Hsin-Hung CHEN ,  Chia-Ping LAI

IPC: H01L23/00

Abstract: A semiconductor device includes: a conductive structure, a conductive bump extending into the conductive structure and contacting the conductive structure along a first surface, the conductive bump configured to interface with an external semiconductor device at a second surface opposite the first surface, the conductive bump being wider along the first surface than the second surface.