公开(公告)号：US20220269003A1

公开(公告)日：2022-08-25

申请号：US17740213

申请日：2022-05-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sui-Ying HSU ,  Yueh-Ying LEE ,  Chien-Ying WU ,  Chen-Hao HUANG ,  Chien-Chang LEE ,  Chia-Ping LAI

IPC: G02B6/136 ,  G02B6/12

Abstract: A photonic device includes an optical coupler, a waveguide structure, a metal-dielectric stack, and a protection layer. The optical coupler is over a semiconductor substrate. The waveguide structure is over the semiconductor substrate and laterally connected to the optical coupler. A top of the waveguide structure is lower than a top of the optical coupler. The metal-dielectric stack is over the optical coupler and the waveguide structure. The metal-dielectric stack has a hole above the optical coupler. The protection layer lines the hole of the metal-dielectric stack.

公开(公告)号：US20210098514A1

公开(公告)日：2021-04-01

申请号：US16894647

申请日：2020-06-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zong-Jie WU ,  Chiao-Chi WANG ,  Chung-Chuan TSENG ,  Chia-Ping LAI

IPC: H01L27/146

Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof.

公开(公告)号：US20230395595A1

公开(公告)日：2023-12-07

申请号：US18232736

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsiang HUNG ,  Li-Hsin CHU ,  Chia-Ping LAI ,  Chung-Chuan TSENG

IPC: H01L27/07 ,  H01L23/532 ,  H01L27/01 ,  H01L27/06

CPC classification number: H01L27/0794 ,  H01L23/5329 ,  H01L28/60 ,  H01L28/20 ,  H01L27/016 ,  H01L27/0682

Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

公开(公告)号：US20250151376A1

公开(公告)日：2025-05-08

申请号：US18983184

申请日：2024-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsiang HUNG ,  Li-Hsin CHU ,  Chia-Ping LAI ,  Chung-Chuan TSENG

IPC: H10D84/00 ,  H01L23/532 ,  H10D1/47 ,  H10D1/68 ,  H10D86/85

Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

公开(公告)号：US20240055449A1

公开(公告)日：2024-02-15

申请号：US18232345

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsiang HUNG ,  Chung-Chuan TSENG ,  Li-Hsin CHU ,  Chia-Ping LAI

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/14643

Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.

公开(公告)号：US20230358959A1

公开(公告)日：2023-11-09

申请号：US18352727

申请日：2023-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sui-Ying HSU ,  Yueh-Ying LEE ,  Chien-Ying WU ,  Chen-Hao HUANG ,  Chien-Chang LEE ,  Chia-Ping LAI

IPC: G02B6/136 ,  G02B6/12

CPC classification number: G02B6/136 ,  G02B6/12004

Abstract: A photonic device includes an optical coupler, a photodetector, a waveguide structure, a metal-dielectric stack, a contact, an interlayer dielectric layer, and a protection layer. The optical coupler, the photodetector, and the waveguide structure are over a substrate. The waveguide structure is laterally connected to the optical couple. A top of the waveguide structure is lower than a top of the optical coupler. The metal-dielectric stack is over the optical coupler, the photodetector, and the waveguide structure. The metal-dielectric stack has a hole above the optical coupler. The contact connects the photodetector to the metal-dielectric stack. The interlayer dielectric layer is below the metal-dielectric stack and surrounds the contact. The protection layer lines the hole of the metal-dielectric stack. A bottom surface of the protection layer is lower than a top surface of the contact.

公开(公告)号：US20230317743A1

公开(公告)日：2023-10-05

申请号：US18329218

申请日：2023-06-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zong-Jie WU ,  Chiao-Chi WANG ,  Chung-Chuan TSENG ,  Chia-Ping LAI

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof. The convex portion of the second semiconductor structure has a top surface substantially coplanar with a top surface of the first semiconductor structure.

公开(公告)号：US20220011511A1

公开(公告)日：2022-01-13

申请号：US16925273

申请日：2020-07-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sui-Ying HSU ,  Yueh-Ying LEE ,  Chien-Ying WU ,  Chen-Hao HUANG ,  Chien-Chang LEE ,  Chia-Ping LAI

IPC: G02B6/136 ,  G02B6/12

Abstract: A method for fabricating a photonic device is provided. The method includes forming an optical coupler and a waveguide structure connected to the optical coupler over a semiconductor substrate; forming a metal-dielectric stack over the optical coupler and the waveguide structure; etching a hole in the metal-dielectric stack and vertically overlapping the optical coupler; and forming a protection layer on a sidewall and a bottom of the hole.

公开(公告)号：US20190088610A1

公开(公告)日：2019-03-21

申请号：US15707145

申请日：2017-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsiang TSAI ,  Hsin-Hung CHEN ,  Chia-Ping LAI

IPC: H01L23/00

Abstract: A semiconductor device includes: a conductive structure, a conductive bump extending into the conductive structure and contacting the conductive structure along a first surface, the conductive bump configured to interface with an external semiconductor device at a second surface opposite the first surface, the conductive bump being wider along the first surface than the second surface.

公开(公告)号：US20150155394A1

公开(公告)日：2015-06-04

申请号：US14093269

申请日：2013-11-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tse TSAI ,  Chia-Ping LAI

IPC: H01L29/792 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L29/42344 ,  H01L29/66833

Abstract: Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a word line cell disposed over the substrate. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The semiconductor device further includes an insulating layer formed on a sidewall of the control gate and a memory gate formed adjacent to the insulating layer. In addition, the insulating layer has a first height, and the memory gate has a second height shorter than the first height.

Abstract translation: 提供半导体器件结构的机构的实施例。 半导体器件结构包括衬底和设置在衬底上的字线单元。 半导体器件结构包括衬底和形成在衬底上的控制栅极。 半导体器件还包括形成在控制栅极的侧壁上的绝缘层和邻近绝缘层形成的存储栅极。 此外，绝缘层具有第一高度，并且存储栅极具有比第一高度短的第二高度。