公开(公告)号：US20190033707A1

公开(公告)日：2019-01-31

申请号：US15882235

申请日：2018-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Lin YANG ,  Chin-Chang HSU ,  Yen-Hung LIN ,  Chung-Hsing WANG ,  Wen-Ju YANG

IPC: G03F1/72 ,  G03F1/84 ,  G03F7/20 ,  G06F17/50 ,  G03F1/00

Abstract: A method for mitigating extreme ultraviolet (EUV) mask defects is disclosed. The method includes the steps of providing a wafer blank, identifying a first plurality of defects on the wafer blank, providing an EUV mask design on top of the wafer blank, identifying non-critical blocks with corresponding stretchable zones on the EUV mask design, overlapping the EUV blank with the EUV mask design, identifying a second plurality of defects, the second plurality of defects are solved, identifying a third plurality of defects, the third plurality of defects are not solved, adjusting the relative locations of the EUV mask design and the EUV blank to solve at least one of the third plurality of defects, and adjusting the locations of at least one of the non-critical blocks within corresponding stretchable zones to solve at least one of the third plurality of defects.