公开(公告)号：US11469307B2

公开(公告)日：2022-10-11

申请号：US17098867

申请日：2020-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Huan Chen ,  Kong-Beng Thei ,  Chien-Chih Chou ,  Alexander Kalnitsky ,  Szu-Hsien Liu ,  Huan-Chih Yuan

IPC: H01L29/423 ,  H01L29/40 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/78

Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.

公开(公告)号：US20220102518A1

公开(公告)日：2022-03-31

申请号：US17098867

申请日：2020-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Huan Chen ,  Kong-Beng Thei ,  Chien-Chih Chou ,  Alexander Kalnitsky ,  Szu-Hsien Liu ,  Huan-Chih Yuan

IPC: H01L29/423 ,  H01L21/762 ,  H01L29/40

Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.