公开(公告)号：US20210335616A1

公开(公告)日：2021-10-28

申请号：US17370684

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi WU ,  Alan TU ,  Chung-Liang CHENG ,  Li-Hsuan CHU ,  Ethan HSIAO ,  Hui-Lin SUNG ,  Sz-Yuan HUNG ,  Sheng-Yung LO ,  C.W. CHIU ,  Chih-Wei HSIEH ,  Chin-Szu LEE

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US20200043739A1

公开(公告)日：2020-02-06

申请号：US16596617

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi WU ,  Alan TU ,  Chung-Liang CHENG ,  Li-Hsuan CHU ,  Ethan HSIAO ,  Hui-Lin SUNG ,  Sz-Yuan HUNG ,  Sheng-Yung LO ,  C.W. CHIU ,  Chih-Wei Hsieh ,  Chin-Szu LEE

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/417 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.