公开(公告)号：US20200090986A1

公开(公告)日：2020-03-19

申请号：US16550901

申请日：2019-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jhy-nan Lin ,  Mu-Min Hung ,  Kai-Shiung Hsu ,  Ding-I Liu

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Aluminum-containing layers and systems and methods for forming the same are provided. In an embodiment, a method includes depositing an aluminum-containing layer on a substrate in a chamber by atomic layer deposition. The depositing further includes contacting the substrate with an aluminum-containing precursor in a first pulse having a first peak pulse flow rate and a first pulse width; contacting the substrate with a nitrogen-containing precursor; contacting the substrate with the aluminum-containing precursor in a second pulse having a second peak pulse flow rate and a second pulse width; and contacting the substrate with the nitrogen-containing precursor. The first peak pulse flow rate is greater than the second peak pulse flow rate. The first pulse width is smaller than the second pulse width.