公开(公告)号：US20220246473A1

公开(公告)日：2022-08-04

申请号：US17524830

申请日：2021-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Hong Lu ,  Tsai-Jung Ho ,  Bor Chiuan Hsieh ,  Po-Cheng Shih ,  Tze-Liang Lee

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/40 ,  H01L21/8234

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a metal gate over the fin, the metal gate being surround by a dielectric layer; etching the metal gate to reduce a height of the metal gate, where after the etching, a recess is formed over the metal gate between gate spacers of the metal gate; lining sidewalls and a bottom of the recess with a semiconductor material; filling the recess by forming a dielectric material over the semiconductor material; forming a mask layer over the metal gate, where a first opening of the mask layer is directly over a portion of the dielectric layer adjacent to the metal gate; removing the portion of the dielectric layer to form a second opening in the dielectric layer, the second opening exposing an underlying source/drain region; and filling the second opening with a conductive material.