公开(公告)号：US09799603B2

公开(公告)日：2017-10-24

申请号：US15007779

申请日：2016-01-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kai-Fang Cheng ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Tien-I Bao ,  Jung-Hsun Tsai

IPC分类号： H01L21/4763 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/5283 ,  H01L21/7681 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a cover layer covering a first inner wall of the first opening. The cover layer has a second opening exposing the first conductive structure. The cover layer includes a metal oxide. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the cover layer. The second conductive structure is electrically connected to the first conductive structure.

公开(公告)号：US10090245B2

公开(公告)日：2018-10-02

申请号：US15728762

申请日：2017-10-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kai-Fang Cheng ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Tien-I Bao ,  Jung-Hsun Tsai

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate and the first conductive structure. The semiconductor device structure includes a second conductive structure over the first conductive structure and extending into the first dielectric layer. The second conductive structure is electrically connected to the first conductive structure. The semiconductor device structure includes a cover layer between the second conductive structure and the first dielectric layer. The cover layer surrounds the second conductive structure, the second conductive structure passes through the cover layer and is partially between the cover layer and the first conductive structure, and the cover layer includes a metal oxide.