公开(公告)号：US20190164844A1

公开(公告)日：2019-05-30

申请号：US15922656

申请日：2018-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Chia-Hui LIN ,  Jaming CHANG ,  Jei Ming CHEN ,  Kai Hung CHENG

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.