公开(公告)号：US20200235214A1

公开(公告)日：2020-07-23

申请号：US16838160

申请日：2020-04-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Chung-Ting KO ,  Hong-Hsien KE ,  Chia-Hui LIN ,  Tai-Chun HUANG

IPC: H01L29/417 ,  H01L21/3115 ,  H01L21/02 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L29/45 ,  H01L29/08 ,  H01L29/78

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a gate structure over a fin structure, forming a source/drain structure in the fin structure and adjacent to the gate structure, forming a dielectric layer over the gate structure and the source/drain structure, and forming an opening in the dielectric layer to expose the source/drain structure. The method further includes depositing a barrier layer lining a sidewall surface of the opening and a top surface of the source/drain structure. The method further includes etching a portion of the barrier layer to expose the source/drain structure. The method further includes depositing a glue layer covering the sidewall surface of the opening and the source/drain structure in the opening. The method further includes forming a contact structure filling the opening in the dielectric layer. The contact structure is surrounded by the glue layer.

公开(公告)号：US20190157405A1

公开(公告)日：2019-05-23

申请号：US15992619

申请日：2018-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Chung-Ting KO ,  Hong-Hsien KE ,  Chia-Hui LIN ,  Tai-Chun HUANG

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a gate spacer, a source/drain structure, a contact structure, a glue layer and a barrier layer. The gate structure is positioned over a fin structure. The gate spacer is positioned over the fin structure and on a sidewall surface of the gate structure. The source/drain structure is positioned in the fin structure and adjacent to the gate spacer. The contact structure is positioned over the source/drain structure. The glue layer covers a bottom surface and a sidewall surface of the contact structure. The barrier layer encircles the sidewall surface of the contact structure. A bottom surface of the glue layer is exposed to the barrier layer.

公开(公告)号：US20190164844A1

公开(公告)日：2019-05-30

申请号：US15922656

申请日：2018-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Chia-Hui LIN ,  Jaming CHANG ,  Jei Ming CHEN ,  Kai Hung CHENG

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US20190259847A1

公开(公告)日：2019-08-22

申请号：US16398079

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Yun-Wen CHU ,  Hong-Hsien KE ,  Chia-Hui LIN ,  Shin-Yeu TSAI ,  Shih-Chieh CHANG

IPC: H01L29/423 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40

Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.

公开(公告)号：US20180151680A1

公开(公告)日：2018-05-31

申请号：US15494023

申请日：2017-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Yun-Wen CHU ,  Hong-Hsien KE ,  Chia-Hui LIN ,  Shin-Yeu TSAI ,  Shih-Chieh CHANG

IPC: H01L29/423 ,  H01L21/02 ,  H01L29/40 ,  H01L21/311 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/4232 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/66545 ,  H01L29/78

Abstract: Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.