公开(公告)号：US20240355906A1

公开(公告)日：2024-10-24

申请号：US18303989

申请日：2023-04-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shao-Hua Hsu ,  Chia-I Lin ,  Hsiu-Hao Tsao ,  Kai-Min Chien ,  Chen-Huang Huang ,  An Chyi Wei ,  Ryan Chia-Jen Chen

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/40

CPC分类号： H01L29/66545 ,  H01L21/02532 ,  H01L29/401 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/66818

摘要： Embodiments include a method and device resulting from the method, including using a radical oxidation process to oxidize a spacer layer which lines the opening after removing a dummy gate electrode. The oxidized layer is removed by an etching process. An STI region disposed below the dummy gate electrode may be partially etched.