公开(公告)号：US20180269161A1

公开(公告)日：2018-09-20

申请号：US15462078

申请日：2017-03-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ming WU ,  Kuan-Liang LIU ,  Pao-Tung CHEN

IPC: H01L23/00 ,  H01L23/58 ,  H01L25/065

Abstract: A hybrid-bonding structure and a method for forming a hybrid-bonding structure are provided. The hybrid-bonding structure includes a first semiconductor substrate, a first conductive line and a first dielectric dummy pattern. The first conductive line is formed over the first semiconductor substrate. A surface of the first conductive line is configured to hybrid-bond with a second conductive line over a second semiconductor substrate. The first dielectric dummy pattern is formed over the first semiconductor substrate and embedded in the first conductive line.