公开(公告)号：US20180269161A1

公开(公告)日：2018-09-20

申请号：US15462078

申请日：2017-03-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ming WU ,  Kuan-Liang LIU ,  Pao-Tung CHEN

IPC: H01L23/00 ,  H01L23/58 ,  H01L25/065

Abstract: A hybrid-bonding structure and a method for forming a hybrid-bonding structure are provided. The hybrid-bonding structure includes a first semiconductor substrate, a first conductive line and a first dielectric dummy pattern. The first conductive line is formed over the first semiconductor substrate. A surface of the first conductive line is configured to hybrid-bond with a second conductive line over a second semiconductor substrate. The first dielectric dummy pattern is formed over the first semiconductor substrate and embedded in the first conductive line.

公开(公告)号：US20190165167A1

公开(公告)日：2019-05-30

申请号：US16173721

申请日：2018-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chou LIN ,  Yi-Cheng CHIU ,  Karthick MURUKESAN ,  Yi-Min CHEN ,  Shiuan-Jeng LIN ,  Wen-Chih CHIANG ,  Chen-Chien CHANG ,  Chih-Yuan CHAN ,  Kuo-Ming WU ,  Chun-Lin TSAI

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.