公开(公告)号：US11289330B2

公开(公告)日：2022-03-29

申请号：US16943198

申请日：2020-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ta Wu ,  Chia-Ta Hsieh ,  Kuo Wei Wu ,  Yu-Chun Chang ,  Ying Ling Tseng

IPC: H01L21/02 ,  H01L27/12 ,  H01L21/84 ,  H01L21/762 ,  H01L29/06

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

公开(公告)号：US20210098253A1

公开(公告)日：2021-04-01

申请号：US16943198

申请日：2020-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ta Wu ,  Chia-Ta Hsieh ,  Kuo Wei Wu ,  Yu-Chun Chang ,  Ying Ling Tseng

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/06 ,  H01L21/762 ,  H01L21/84

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.