公开(公告)号：US10707139B2

公开(公告)日：2020-07-07

申请号：US15725554

申请日：2017-10-05

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuo-Sheng Lien ,  Shih-Ta Yu

IPC分类号： H01L21/302 ,  H01L21/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065

摘要： An etching method for an IC is provided. The etching method includes retrieving processing data including a pattern-density and at least one etching parameter of an etching process for a semiconductor device; determining end point time by consulting a table which records historical information of a plurality of PDs, the etching parameter and the EP time; compensating for the PD and the EP time by adjusting the etching parameter to perform the etching process; and performing the etching process on another semiconductor device based on the adjusted etching parameter, the PD and the EP time to manufacture the IC.