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    INTERCONNECT STRUCTURE INCLUDING A CONTINUOUS CONDUCTIVE BODY
    1.
    发明申请
    INTERCONNECT STRUCTURE INCLUDING A CONTINUOUS CONDUCTIVE BODY 有权
    互连结构，包括连续导电体

    公开(公告)号：US20140225261A1

    公开(公告)日：2014-08-14

    申请号：US14258175

    申请日：2014-04-22

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Ming Han Lee ,  Hai-Ching Chen ,  Hsiang-Huan Lee ,  Tien-I Bao ,  Chi-Lin Teng

    IPC分类号： H01L23/485 ,  H01L23/482

    CPC分类号： H01L23/4827 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76852 ,  H01L21/76867 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/528 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Some embodiments of the present disclosure relate to an interconnect structure for connecting devices of a semiconductor substrate. The interconnect structure includes a dielectric layer over the substrate and a continuous conductive body passing through the dielectric layer. The continuous conductive body is made up of a lower body region and an upper body region. The lower body region has a first width defined between opposing lower sidewalls of the continuous conductive body, and the upper body region has a second width defined between opposing upper sidewalls of the continuous conductive body. The second width is less than the first width. A barrier layer separates the continuous conductive body from the dielectric layer.

    摘要翻译： 本公开的一些实施例涉及用于连接半导体衬底的器件的互连结构。 所述互连结构包括在所述衬底上的电介质层和穿过所述电介质层的连续导电体。 连续导电体由下体区域和上体区域构成。 下体区域具有限定在连续导电体的相对的下侧壁之间的第一宽度，并且上体区域具有限定在连续导电体的相对的上侧壁之间的第二宽度。 第二宽度小于第一宽度。 阻挡层将连续导电体与电介质层分开。