公开(公告)号：US20230020731A1

公开(公告)日：2023-01-19

申请号：US17533372

申请日：2021-11-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Yu Lin ,  Szu-Hua Chen ,  Kuan-Kan Hu ,  Kenichi Sano ,  Po-Cheng Wang ,  Wei-Yen Woon ,  Pinyen Lin ,  Che Chi Shih

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234

Abstract: The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

公开(公告)号：US12062576B2

公开(公告)日：2024-08-13

申请号：US17533372

申请日：2021-11-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Yu Lin ,  Szu-Hua Chen ,  Kuan-Kan Hu ,  Kenichi Sano ,  Po-Cheng Wang ,  Wei-Yen Woon ,  Pinyen Lin ,  Che Chi Shih

IPC: H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/823431 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.