公开(公告)号：US11309265B2

公开(公告)日：2022-04-19

申请号：US16503773

申请日：2019-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hsun Huang ,  Po-Han Wang ,  Ing-Ju Lee ,  Chao-Lung Chen ,  Cheng-Ming Wu

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: Methods of fabricating semiconductor devices are provided. The method includes providing a substrate and forming an interconnect structure on the substrate. The interconnect structure includes a top metal layer. The method also includes forming a first barrier film on the top metal layer using a first deposition process with a first level of power, and forming a second barrier film on the first barrier film using a second deposition process with a second level of power that is lower than the first level of power. The method further includes forming an aluminum-containing layer on the second barrier film. In addition, the method includes patterning the first barrier film, the second barrier film and the aluminum-containing layer to form a conductive pad structure.