公开(公告)号：US11515398B2

公开(公告)日：2022-11-29

申请号：US17005513

申请日：2020-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Li Kuo ,  Scott Liu ,  Po-Wei Chen ,  Shih-Hsiang Tai

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/10

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

公开(公告)号：US20170352731A1

公开(公告)日：2017-12-07

申请号：US15170315

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Li Kuo ,  Scott Liu ,  Po-Wei Chen ,  Shih-Hsiang Tal

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.

公开(公告)号：US10825905B2

公开(公告)日：2020-11-03

申请号：US15170315

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Li Kuo ,  Scott Liu ,  Po-Wei Chen ,  Shih-Hsiang Tai

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.