公开(公告)号：US20190093218A1

公开(公告)日：2019-03-28

申请号：US16115139

申请日：2018-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Eddy Lay ,  Shih-Fang Chen ,  Shun-Chin Chen

IPC: C23C16/44 ,  H01J37/32

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.