公开(公告)号：US09605345B2

公开(公告)日：2017-03-28

申请号：US13974366

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Eddy Lay ,  Shih-Min Tseng ,  Sheng-Wei Wu ,  Jen-Chung Chen ,  Shih-Fang Chen

IPC: C23C16/46 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/46 ,  C23C16/4401 ,  C23C16/455

Abstract: A vertical furnace includes a heat treatment tube, at least one reactive gas inlet, first adiabatic plates and second adiabatic plates. The at least one reactive gas inlet is disposed at or near a bottom end of the heat treatment tube. The first adiabatic plates are stacked in the heat treatment tube, each of the first adiabatic plates having a flow channel structure for allowing a gas to pass through, in which all the corners in the flow channel structure are rounded. The second adiabatic plates are stacked below the first adiabatic plates in the heat treatment tube.

公开(公告)号：US20190093218A1

公开(公告)日：2019-03-28

申请号：US16115139

申请日：2018-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Eddy Lay ,  Shih-Fang Chen ,  Shun-Chin Chen

IPC: C23C16/44 ,  H01J37/32

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.

公开(公告)号：US20150053136A1

公开(公告)日：2015-02-26

申请号：US13974366

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Eddy Lay ,  Shih-Min Tseng ,  Sheng-Wei Wu ,  Jen-Chung Chen ,  Shih-Fang Chen

IPC: C23C16/46

CPC classification number: C23C16/46 ,  C23C16/4401 ,  C23C16/455

Abstract: A vertical furnace includes a heat treatment tube, at least one reactive gas inlet, first adiabatic plates and second adiabatic plates. The at least one reactive gas inlet is disposed at or near a bottom end of the heat treatment tube. The first adiabatic plates are stacked in the heat treatment tube, each of the first adiabatic plates having a flow channel structure for allowing a gas to pass through, in which all the corners in the flow channel structure are rounded. The second adiabatic plates are stacked below the first adiabatic plates in the heat treatment tube.

Abstract translation: 立式炉包括热处理管，至少一个反应性气体入口，第一绝热板和第二绝热板。 至少一个反应气体入口设置在热处理管的底端处或其附近。 第一绝热板堆叠在热处理管中，每个第一绝热板具有用于允许气体通过的流动通道结构，其中流动通道结构中的所有角都是圆形的。 第二绝热板堆叠在热处理管中的第一绝热板的下方。

公开(公告)号：US10269530B1

公开(公告)日：2019-04-23

申请号：US15885286

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Shih-Fang Chen

IPC: H01J37/08 ,  H01L21/26 ,  H01L21/265 ,  H01J37/317

Abstract: An apparatus includes an ionization chamber and an electron source device at least partially disposed inside the ionization chamber. The ionization chamber is configured to receive at least one chemical and provide plasma having ionized chemicals. The electron source device includes at least one filament configured to generate electrons, and a cathode configured to emit secondary electrons from the front surface when the electrons from the at least one filament hit the back surface of the cathode. The front surface of the cathode is shaped convex facing inside the ionization chamber.