公开(公告)号：US20230378052A1

公开(公告)日：2023-11-23

申请号：US18365009

申请日：2023-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Huang ,  Ming-Da Cheng ,  Songbor Lee ,  Jung-You Chen ,  Ching-Hua Kuan ,  Tzy-Kuang Lee

IPC: H01L23/522 ,  H01L23/00

CPC classification number: H01L23/5223 ,  H01L24/03 ,  H01L23/5226 ,  H01L28/60 ,  H01L2224/02313 ,  H01L2224/02311

Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

公开(公告)号：US12255131B2

公开(公告)日：2025-03-18

申请号：US18365009

申请日：2023-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Huang ,  Ming-Da Cheng ,  Songbor Lee ,  Jung-You Chen ,  Ching-Hua Kuan ,  Tzy-Kuang Lee

IPC: H01L23/522 ,  H01L23/00 ,  H01L49/02

Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

公开(公告)号：US11935826B2

公开(公告)日：2024-03-19

申请号：US17197483

申请日：2021-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Huang ,  Ming-Da Cheng ,  Songbor Lee ,  Jung-You Chen ,  Ching-Hua Kuan ,  Tzy-Kuang Lee

IPC: H01L23/522 ,  H01L23/00 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/5226 ,  H01L24/03 ,  H01L28/60 ,  H01L2224/02311 ,  H01L2224/02313

Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.