公开(公告)号：US20190287971A1

公开(公告)日：2019-09-19

申请号：US15920967

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping LEE ,  Jian-Shiou HUANG ,  Chih-Tang PENG ,  Sung-En LIN

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.