公开(公告)号：US20200058747A1

公开(公告)日：2020-02-20

申请号：US16432594

申请日：2019-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting FANG ,  Da-Wen LIN ,  Fu-Kai YANG ,  Chen-Ming LEE ,  Mei-Yun WANG

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40

Abstract: A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an isolation structure formed over a substrate, and a gate structure formed over the isolation structure. The FinFET device structure includes a first dielectric layer formed over the isolation structure and adjacent to the gate structure and a source/drain (S/D) contact structure formed in the first dielectric layer. The FinFET device structure also includes a deep contact structure formed through the first dielectric layer and adjacent to the S/D contact structure. The deep contact structure is through the isolation structure, and a bottom surface of the S/D contact structure is higher than a bottom surface of the deep contact structure.