公开(公告)号：US11349023B2

公开(公告)日：2022-05-31

申请号：US16589440

申请日：2019-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Man-Ho Kwan ,  Fu-Wei Yao ,  Chun Lin Tsai ,  Jiun-Lei Jerry Yu ,  Ting-Fu Chang

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

Abstract: In some embodiments, the present disclosure relates to an integrated transistor device, including a first barrier layer arranged over a substrate. Further, an undoped layer may be arranged over the first barrier layer and have a n-channel device region laterally next to a p-channel device region. The n-channel device region of the undoped layer has a topmost surface that is above a topmost surface of the p-channel device region of the undoped layer. The integrated transistor device may further comprise a second barrier layer over the n-channel device region of the undoped layer. A first gate electrode is arranged over the second barrier layer, and a second gate electrode is arranged over the p-channel device region of the undoped layer.

公开(公告)号：US20210376135A1

公开(公告)日：2021-12-02

申请号：US16884398

申请日：2020-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Man-Ho Kwan ,  Fu-Wei Yao ,  Chun Lin Tsai ,  Jiun-Lei Jerry Yu ,  Ting-Fu Chang

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip a first undoped layer overlies a substrate. A first barrier layer overlies the first undoped layer and has a first thickness. A first doped layer overlies the first barrier layer and is disposed laterally within an n-channel device region of the substrate. A second barrier layer overlies the first barrier layer and is disposed within a p-channel device region that is laterally adjacent to the n-channel device region. The second barrier layer has a second thickness that is greater than the first thickness. A second undoped layer overlies the second barrier layer. A second doped layer overlies the second undoped layer. The second undoped layer and the second doped layer are disposed within the p-channel device region.

公开(公告)号：US20210098615A1

公开(公告)日：2021-04-01

申请号：US16589440

申请日：2019-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Man-Ho Kwan ,  Fu-Wei Yao ,  Chun Lin Tsai ,  Jiun-Lei Jerry Yu ,  Ting-Fu Chang

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423

Abstract: In some embodiments, the present disclosure relates to an integrated transistor device, including a first barrier layer arranged over a substrate. Further, an undoped layer may be arranged over the first barrier layer and have a n-channel device region laterally next to a p-channel device region. The n-channel device region of the undoped layer has a topmost surface that is above a topmost surface of the p-channel device region of the undoped layer. The integrated transistor device may further comprise a second barrier layer over the n-channel device region of the undoped layer. A first gate electrode is arranged over the second barrier layer, and a second gate electrode is arranged over the p-channel device region of the undoped layer.

公开(公告)号：US11522077B2

公开(公告)日：2022-12-06

申请号：US16884398

申请日：2020-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Man-Ho Kwan ,  Fu-Wei Yao ,  Chun Lin Tsai ,  Jiun-Lei Jerry Yu ,  Ting-Fu Chang

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip a first undoped layer overlies a substrate. A first barrier layer overlies the first undoped layer and has a first thickness. A first doped layer overlies the first barrier layer and is disposed laterally within an n-channel device region of the substrate. A second barrier layer overlies the first barrier layer and is disposed within a p-channel device region that is laterally adjacent to the n-channel device region. The second barrier layer has a second thickness that is greater than the first thickness. A second undoped layer overlies the second barrier layer. A second doped layer overlies the second undoped layer. The second undoped layer and the second doped layer are disposed within the p-channel device region.