公开(公告)号：US20200266110A1

公开(公告)日：2020-08-20

申请号：US15929546

申请日：2020-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L21/02 ,  H01L21/324 ,  H01L29/165

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

公开(公告)号：US20180323112A1

公开(公告)日：2018-11-08

申请号：US16025786

申请日：2018-07-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L29/165 ,  H01L21/324 ,  H01L27/092 ,  H01L21/02

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.