公开(公告)号：US20250006687A1

公开(公告)日：2025-01-02

申请号：US18345248

申请日：2023-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zheng-Yong Liang ,  Wei-Ting Yeh ,  Han-De Chen ,  Chen-Fong Tsai ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC: H01L23/00 ,  H01L23/373

Abstract: An integrated circuit die with two material layers having metal nano-particles and the method of forming the same are provided. The integrated circuit die includes a device layer comprising a first transistor, a first interconnect structure on a first side of the device layer, a first material layer on the first interconnect structure, wherein the first material layer comprises first metal nano-particles, and a second material layer bonded to the first material layer, wherein the second material layer comprises second metal nano-particles, and wherein the first material layer and the second material layer share an interface.