公开(公告)号：US10276444B2

公开(公告)日：2019-04-30

申请号：US15724650

申请日：2017-10-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hua Lee ,  Jung-Wei Lee ,  Wen-Chieh Huang

IPC: H01L21/8234 ,  H01L21/285 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02

Abstract: A method for forming a fin-based transistor includes forming a fin on a substrate; overlaying at least an upper portion of the fin with nitrogen-based radicals, wherein the nitrogen-based radicals are distributed along a sidewall and over a top surface of the upper portion of the fin with respective different concentrations; and forming an oxide layer over the upper portion of the fin using a thermal oxidation process.