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公开(公告)号:US12288809B2
公开(公告)日:2025-04-29
申请号:US18612701
申请日:2024-03-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Miao-Syuan Fan , Pei-Wei Lee , Ching-Hua Lee , Jung-Wei Lee
IPC: H01L29/08 , H01L21/8234 , H01L27/088 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/78
Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.
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公开(公告)号:US11929422B2
公开(公告)日:2024-03-12
申请号:US17876816
申请日:2022-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Cheng-Yi Peng , Ching-Hua Lee , Song-Bor Lee
IPC: H01L29/66 , H01L29/06 , H01L29/423 , H01L29/775 , H01L29/786
CPC classification number: H01L29/66439 , H01L29/0673 , H01L29/42392 , H01L29/66545 , H01L29/66553 , H01L29/775 , H01L29/78696
Abstract: The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second S/D regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers. A first portion of the passivation layer is disposed between the epitaxial region and the stack of first and second semiconductor layers and a second portion of the passivation layer is disposed on sidewalk of the nanostructured channel regions
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公开(公告)号:US10276444B2
公开(公告)日:2019-04-30
申请号:US15724650
申请日:2017-10-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ching-Hua Lee , Jung-Wei Lee , Wen-Chieh Huang
IPC: H01L21/8234 , H01L21/285 , H01L29/06 , H01L29/66 , H01L21/02
Abstract: A method for forming a fin-based transistor includes forming a fin on a substrate; overlaying at least an upper portion of the fin with nitrogen-based radicals, wherein the nitrogen-based radicals are distributed along a sidewall and over a top surface of the upper portion of the fin with respective different concentrations; and forming an oxide layer over the upper portion of the fin using a thermal oxidation process.
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公开(公告)号:US11251268B2
公开(公告)日:2022-02-15
申请号:US16937365
申请日:2020-07-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Miao-Syuan Fan , Pei-Wei Lee , Ching-Hua Lee , Jung-Wei Lee
IPC: H01L29/08 , H01L27/088 , H01L29/78 , H01L29/66 , H01L29/417 , H01L21/8234 , H01L29/423 , H01L29/10 , H01L29/40
Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.
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公开(公告)号:US11990512B2
公开(公告)日:2024-05-21
申请号:US17650867
申请日:2022-02-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Miao-Syuan Fan , Pei-Wei Lee , Ching-Hua Lee , Jung-Wei Lee
IPC: H01L29/08 , H01L21/8234 , H01L27/088 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/78
CPC classification number: H01L29/0847 , H01L21/823412 , H01L21/823418 , H01L21/823431 , H01L27/0886 , H01L29/1037 , H01L29/401 , H01L29/41791 , H01L29/42356 , H01L29/66795 , H01L29/785
Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.
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公开(公告)号:US11695055B2
公开(公告)日:2023-07-04
申请号:US16807305
申请日:2020-03-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Cheng-Yi Peng , Ching-Hua Lee , Song-Bor Lee
IPC: H01L23/31 , H01L29/78 , H01L29/06 , H01L27/092 , H01L29/66 , H01L21/8238 , H01L29/423 , H01L29/786 , H01L29/775
CPC classification number: H01L29/66439 , H01L29/0673 , H01L29/42392 , H01L29/66545 , H01L29/66553 , H01L29/775 , H01L29/78696
Abstract: The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second S/D regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers. A first portion of the passivation layer is disposed between the epitaxial region and the stack of first and second semiconductor layers and a second portion of the passivation layer is disposed on sidewalls of the nanostructured channel regions.
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公开(公告)号:US11232953B2
公开(公告)日:2022-01-25
申请号:US16573596
申请日:2019-09-17
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Miao-Syuan Fan , Ching-Hua Lee , Ming-Te Chen , Jung-Wei Lee , Pei-Wei Lee
IPC: H01L21/285 , H01L21/02 , H01L29/66
Abstract: A semiconductor device includes a gate structure disposed over a channel region, a source/drain epitaxial layer disposed at a source/drain region, a nitrogen containing layer disposed on the source/drain epitaxial layer, a silicide layer disposed on the nitrogen containing layer, and a conductive contact disposed on the silicide layer.
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