公开(公告)号：US20210035621A1

公开(公告)日：2021-02-04

申请号：US16805839

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chin Lin ,  Hung-Chang Yu

IPC: G11C11/16

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

公开(公告)号：US10998024B2

公开(公告)日：2021-05-04

申请号：US16805839

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chin Lin ,  Hung-Chang Yu

IPC: G11C11/16

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.