公开(公告)号：US20200091345A1

公开(公告)日：2020-03-19

申请号：US16135108

申请日：2018-09-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Li CHIU ,  Hsin-Che CHIANG ,  Chun-Sheng LIANG ,  Kuo-Hua PAN

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/033 ,  H01L29/66

摘要： A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method for forming a FinFET device structure also includes forming a first spacer over a sidewall of the gate structure and forming a second spacer over the first spacer. The method for forming a FinFET device structure further includes etching the second spacer to form a gap and forming a mask layer over the gate structure and the first spacer after the gap is formed. In addition, the mask layer extends into the gap in such a way that the mask layer and the fin structure are separated by an air gap in the gap.