公开(公告)号：US20210065347A1

公开(公告)日：2021-03-04

申请号：US17098895

申请日：2020-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Ko LIAO ,  Ya-Hsun HSUEH ,  Sheng-Hsiang CHUANG ,  Hsu-Shui LIU ,  Jiun-Rong PAI ,  Shou-Wen KUO

IPC: G06T7/00 ,  G06T7/73 ,  G06T5/00 ,  H01L21/66 ,  G06T7/33

Abstract: A method includes: receiving a defect map from a defect scanner, wherein the defect map comprises at least one defect location of a semiconductor workpiece; annotating the defect map with a reference fiducial location of the semiconductor workpiece; determining a detected fiducial location within image data of the semiconductor workpiece; determining an offset correction based on comparing the detected fiducial location with the reference fiducial location; producing a corrected defect map by applying the offset correction to the defect map, wherein the applying the offset correction translocates the at least one defect location; and transferring the corrected defect map to a defect reviewer configured to perform root cause analysis based on the corrected defect map.