公开(公告)号：US20230335551A1

公开(公告)日：2023-10-19

申请号：US17896970

申请日：2022-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Teng Chuang ,  Kuei-Lun Lin ,  Te-Yang Lai ,  Da-Yuan Lee ,  Weng Chang ,  Chi On Chui

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the deposition, diffusion, and removal of dipole materials in order to provide different dipole regions within different transistors. These different dipole regions cause the different transistors to have different threshold voltages.

公开(公告)号：US20230317790A1

公开(公告)日：2023-10-05

申请号：US18152601

申请日：2023-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Teng Chuang ,  Kuei-Lun Lin ,  Te-Yang Lai ,  Da-Yuan Lee ,  Weng Chang ,  Chi On Chui

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L29/0673 ,  H01L29/78696 ,  H01L29/42384 ,  H01L21/823412

Abstract: In an embodiment, a semiconductor device is provided, which includes a first doped gate dielectric layer and a second doped gate dielectric layer, wherein the first doped gate dielectric layer and the second doped gate dielectric layer comprise a high-k material doped with a dipole dopant. The second doped gate dielectric layer has a second concentration of the first dipole dopant. The concentration of the dipole dopant in the first doped gate dielectric layer is greater than the concentration, and the concentration peak of the dipole dopant in the first doped gate dielectric layer is deeper than the concentration peak of the dipole dopant in the second doped gate dielectric layer. A first gate electrode over the first doped gate dielectric layer, and a second gate electrode over the second doped gate dielectric layer, the first gate electrode and the second gate electrode have a same width.