公开(公告)号：US20220037518A1

公开(公告)日：2022-02-03

申请号：US17343153

申请日：2021-06-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Wang ,  Wei-Chen Yang ,  Yao-Chung Chang ,  Ru-Yi Su ,  Yen-Ku Lin ,  Chuan-Wei Tsou ,  Chun Lin Tsai

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; a gate stack disposed on the AlGaN layer; a source feature and a drain feature disposed on the AlGaN layer and interposed by the gate stack; a dielectric material layer is disposed on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, wherein the field plate includes a step-wise structure.

公开(公告)号：US20240379836A1

公开(公告)日：2024-11-14

申请号：US18784121

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Wang ,  Wei-Chen Yang ,  Yao-Chung Chang ,  Ru-Yi Su ,  Yen-Ku Lin ,  Chuan-Wei Tsou ,  Chun Lin Tsai

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; a gate stack disposed on the AlGaN layer; a source feature and a drain feature disposed on the AlGaN layer and interposed by the gate stack; a dielectric material layer is disposed on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, wherein the field plate includes a step-wise structure.