公开(公告)号：US20240387155A1

公开(公告)日：2024-11-21

申请号：US18786523

申请日：2024-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Tang Wu ,  Szu-Hua Wu ,  Chin-Szu Lee ,  Yi-Lin Wang

IPC: H01J37/34 ,  C23C14/16 ,  C23C14/34 ,  H01J37/32 ,  H01L21/285 ,  H10N50/01

Abstract: A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.