公开(公告)号：US20240079278A1

公开(公告)日：2024-03-07

申请号：US18151061

申请日：2023-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jhih-Yong Han ,  Wen-Yen Chen ,  Yi-Ting Wu ,  Tsai-Yu Huang ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823892 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924 ,  H01L27/0928 ,  H01L21/266

Abstract: A method includes forming a pad layer. The pad layer includes a first portion over a first part of a semiconductor substrate, and a second portion over a second part of the semiconductor substrate. The first portion has a first thickness, and the second portion has a second thickness smaller than the first thickness. The semiconductor substrate is then annealed to form a first oxide layer over the first part of the semiconductor substrate, and a second oxide layer over the second part of the semiconductor substrate. The pad layer, the first oxide layer, and the second oxide layer are removed. A semiconductor layer is epitaxially grown over and contacting the first part and the second part of the semiconductor substrate.