公开(公告)号：US20230215758A1

公开(公告)日：2023-07-06

申请号：US18182485

申请日：2023-03-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Yen Chen ,  Li-Ting Wang ,  Wan-Chen Hsieh ,  Bo-Cyuan Lu ,  Tai-Chun Huang ,  Huicheng Chang ,  Yee-Chia Yeo

IPC分类号： H01L21/762 ,  H01L21/768 ,  H01L21/764 ,  H01L21/02

CPC分类号： H01L21/76224 ,  H01L21/76882 ,  H01L21/764 ,  H01L21/7684 ,  H01L21/02532

摘要： A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.

公开(公告)号：US11605555B2

公开(公告)日：2023-03-14

申请号：US16939718

申请日：2020-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Yen Chen ,  Li-Ting Wang ,  Wan-Chen Hsieh ,  Bo-Cyuan Lu ,  Tai-Chun Huang ,  Huicheng Chang ,  Yee-Chia Yeo

IPC分类号： H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L21/764

摘要： A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.

公开(公告)号：US12068168B2

公开(公告)日：2024-08-20

申请号：US17664732

申请日：2022-05-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Yen Chen

IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/3086 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

摘要： A method includes forming an etching mask to cover a mandrel, a first spacer, and a second spacer, and the first spacer and the second spacer are in contact with opposing sidewalls of the mandrel. The etching mask is then patterned, and includes a first portion covering the first spacer, a second portion covering the second spacer, and a bridge portion connecting the first portion to the second portion. The bridge portion has first sidewalls. A first etching process is performed on the mandrel using the etching mask to define pattern, and after the first etching process, the mandrel includes a second bridge portion having second sidewalls vertically aligned to corresponding ones of the first sidewalls. After the mandrel is etched-through, a second etching process is performed to laterally recess the second bridge portion of the mandrel.

公开(公告)号：US20240088225A1

公开(公告)日：2024-03-14

申请号：US18508788

申请日：2023-11-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Su-Hao Liu ,  Wen-Yen Chen ,  Li-Heng Chen ,  Li-Ting Wang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Ying-Lang Wang

IPC分类号： H01L29/08 ,  H01L21/02 ,  H01L21/265 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/161 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0847 ,  H01L21/02532 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/76814 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0924 ,  H01L29/161 ,  H01L29/66507 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851 ,  H01L2029/7858

摘要： A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

公开(公告)号：US20230197852A1

公开(公告)日：2023-06-22

申请号：US18174045

申请日：2023-02-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Su-Hao Liu ,  Kuo-Ju Chen ,  Wen-Yen Chen ,  Ying-Lang Wang ,  Liang-Yin Chen ,  Li-Ting Wang ,  Huicheng Chang

IPC分类号： H01L29/78 ,  H01L21/768 ,  H01L21/324 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/785 ,  H01L21/76829 ,  H01L21/324 ,  H01L21/823814 ,  H01L29/6681 ,  H01L21/02694 ,  H01L21/823864

摘要： Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

公开(公告)号：US20220293460A1

公开(公告)日：2022-09-15

申请号：US17826352

申请日：2022-05-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tai-Yen Peng ,  Wen-Yen Chen ,  Chih-Hao Chen

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L23/522 ,  H01L23/528 ,  H01L21/311

摘要： Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask layer to form a first opening, where in a plan view a major axis of the opening extends in a direction that is perpendicular to a major axis of a spacer of the plurality of spacers. The method also includes depositing a sacrificial material in the opening, patterning the sacrificial material, etching the first mask layer using the plurality of spacers and the patterned sacrificial material, etching the target layer using the etched first mask layer to form second openings in the target layer, and filling the second openings in the target layer with a conductive material.

公开(公告)号：US10943791B2

公开(公告)日：2021-03-09

申请号：US16428029

申请日：2019-05-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yi-Chang Lee ,  Jiann-Horng Lin ,  Chih-Hao Chen ,  Ying-Hao Wu ,  Wen-Yen Chen ,  Shih-Hua Tseng ,  Shu-Huei Suen

IPC分类号： H01L21/311 ,  H01L21/027 ,  H01L21/02

摘要： In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

公开(公告)号：US20210066121A1

公开(公告)日：2021-03-04

申请号：US17098585

申请日：2020-11-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tai-Yen Peng ,  Wen-Yen Chen ,  Chih-Hao Chen

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L23/522 ,  H01L23/528 ,  H01L21/311

摘要： Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask layer to form a first opening, where in a plan view a major axis of the opening extends in a direction that is perpendicular to a major axis of a spacer of the plurality of spacers. The method also includes depositing a sacrificial material in the opening, patterning the sacrificial material, etching the first mask layer using the plurality of spacers and the patterned sacrificial material, etching the target layer using the etched first mask layer to form second openings in the target layer, and filling the second openings in the target layer with a conductive material.

公开(公告)号：US10700181B2

公开(公告)日：2020-06-30

申请号：US15590418

申请日：2017-05-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Han Huang ,  Wen-Yen Chen ,  Jing-Huei Huang

IPC分类号： H01L29/66 ,  H01L29/08 ,  H01L29/78 ,  H01L21/02 ,  H01L21/22 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/38 ,  H01L21/28 ,  H01L29/423 ,  H01L21/223

摘要： A FinFET device structure and method for forming the same are provided. The method includes forming a fin structure over a substrate and forming a dummy gate electrode over a middle portion of the fin structure. The method also includes forming a spacer layer on the dummy gate electrode and on the fin structure and performing a plasma doping process on the dummy gate electrode and on the spacer layer. The method further includes performing an annealing process, wherein the annealing process is performed by using a gas comprising oxygen, such that a doped region is formed in a portion of the fin structure, and the spacer layer is doped with oxygen after the annealing process.

公开(公告)号：US20240355633A1

公开(公告)日：2024-10-24

申请号：US18762702

申请日：2024-07-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Yen Chen

IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/3086 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

摘要： A method includes forming an etching mask to cover a mandrel, a first spacer, and a second spacer, and the first spacer and the second spacer are in contact with opposing sidewalls of the mandrel. The etching mask is then patterned, and includes a first portion covering the first spacer, a second portion covering the second spacer, and a bridge portion connecting the first portion to the second portion. The bridge portion has first sidewalls. A first etching process is performed on the mandrel using the etching mask to define pattern, and after the first etching process, the mandrel includes a second bridge portion having second sidewalls vertically aligned to corresponding ones of the first sidewalls. After the mandrel is etched-through, a second etching process is performed to laterally recess the second bridge portion of the mandrel.