公开(公告)号：US20200058689A1

公开(公告)日：2020-02-20

申请号：US16662453

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC: H01L27/146

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

公开(公告)号：US20190103428A1

公开(公告)日：2019-04-04

申请号：US16017078

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC: H01L27/146

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

公开(公告)号：US11183523B2

公开(公告)日：2021-11-23

申请号：US16662453

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC: H01L27/146

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

公开(公告)号：US10790321B2

公开(公告)日：2020-09-29

申请号：US16017078

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC: H01L27/146

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.