公开(公告)号：US11211479B2

公开(公告)日：2021-12-28

申请号：US16155712

申请日：2018-10-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Cheng Shen ,  Guan-Jie Shen

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06 ,  H01L29/161 ,  H01L29/10 ,  H01L29/78

Abstract: A method of fabricating a trimmed fin includes: forming a preliminary fin including silicon and germanium protruding from a substrate, in which the preliminary fin has a first germanium concentration at a top surface of the preliminary fin and a second germanium concentration at a position beneath the top surface of the preliminary fin, and the first germanium concentration is less than the second germanium concentration; oxidizing an exposed surface of the preliminary fin to form a trimmed fin covered by an oxide layer; and removing the oxide layer to obtain the trimmed fin.

公开(公告)号：US11538926B2

公开(公告)日：2022-12-27

申请号：US16837908

申请日：2020-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Cheng Shen ,  Guan-Jie Shen

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

公开(公告)号：US12249623B2

公开(公告)日：2025-03-11

申请号：US17447099

申请日：2021-09-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Cheng Shen ,  Guan-Jie Shen

IPC: H01L29/423 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

Abstract: The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The semiconductor device also includes a gate structure that includes first and second portions. The first portion is formed between each nanostructure of nanostructures. The second portion is formed under the bottom-most nanostructure of the plurality of nanostructures and extends under a top surface of the substrate.

公开(公告)号：US20220336585A1

公开(公告)日：2022-10-20

申请号：US17447099

申请日：2021-09-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Cheng Shen ,  Guan-Jie Shen

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78

Abstract: The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The semiconductor device also includes a gate structure that includes first and second portions. The first portion is formed between each nanostructure of nanostructures. The second portion is formed under the bottom-most nanostructure of the plurality of nanostructures and extends under a top surface of the substrate.