公开(公告)号：US20210036043A1

公开(公告)日：2021-02-04

申请号：US17063801

申请日：2020-10-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US10833115B2

公开(公告)日：2020-11-10

申请号：US16851265

申请日：2020-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US20200266228A1

公开(公告)日：2020-08-20

申请号：US16851265

申请日：2020-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US10680024B2

公开(公告)日：2020-06-09

申请号：US15935341

申请日：2018-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L31/062 ,  H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US20190057994A1

公开(公告)日：2019-02-21

申请号：US15935341

申请日：2018-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US11251213B2

公开(公告)日：2022-02-15

申请号：US17063801

申请日：2020-10-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.