公开(公告)号：US20150243697A1

公开(公告)日：2015-08-27

申请号：US14192168

申请日：2014-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Yu-Heng CHENG ,  Fu-Tsun TSAI ,  Hsi-Jung WU ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.

Abstract translation: 本公开的实施例提供了一种图像传感器装置。 图像传感器装置包括半导体衬底。 半导体衬底具有前表面，与前表面相反的后表面，靠近前表面的感光区域和与光感测区域相邻的沟槽。 图像传感器装置包括位于沟槽的内壁上的反射层，其中反射层的光反射率为约70％至约100％。