公开(公告)号：US10679859B2

公开(公告)日：2020-06-09

申请号：US16220247

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Liang Cheng ,  Yu-Lin Liu ,  Ming-Hsien Lin ,  Tzo-Hung Luo

IPC: H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522

Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.

公开(公告)号：US10170322B1

公开(公告)日：2019-01-01

申请号：US15815059

申请日：2017-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Liang Cheng ,  Yu-Lin Liu ,  Ming-Hsien Lin ,  Tzo-Hung Luo

IPC: H01L21/285 ,  H01L23/532 ,  H01L21/768

Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.

公开(公告)号：US20190148153A1

公开(公告)日：2019-05-16

申请号：US16220247

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Liang Cheng ,  Yu-Lin Liu ,  Ming-Hsien Lin ,  Tzo-Hung Luo

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.