公开(公告)号：US20230299010A1

公开(公告)日：2023-09-21

申请号：US17748640

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Haklay Chuang ,  Yuan-Jen Lee ,  Nuo Xu ,  Fang-Lan Chu ,  Wei Cheng Wu

IPC: H01L23/544 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L24/80 ,  H01L24/08 ,  H01L2223/54426 ,  H01L2224/8013 ,  H01L2224/80948 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/08147 ,  H01L2224/0213 ,  H01L25/0657

Abstract: In an embodiment, a method includes: receiving a first wafer and a second wafer, the first wafer including a first alignment mark, the first alignment mark including a first grid of first magnetic features, the second wafer including a second alignment mark, the second alignment mark including a second grid of second magnetic features; aligning the first alignment mark with the second alignment mark in an optical alignment process; after the optical alignment process, aligning the first alignment mark with the second alignment mark in a magnetic alignment process, north poles of the first magnetic features being aligned with south poles of the second magnetic features, south poles of the first magnetic features being aligned with north poles of the second magnetic features; and forming bonds between the first wafer and the second wafer.

公开(公告)号：US20230299041A1

公开(公告)日：2023-09-21

申请号：US17748547

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Haklay Chuang ,  Yuan-Jen Lee ,  Fang-Lan Chu ,  Wei Cheng Wu ,  Nuo Xu

IPC: H01L23/00 ,  H01L23/544

CPC classification number: H01L24/80 ,  H01L23/544 ,  H01L24/08 ,  H01L2223/54426 ,  H01L2224/0217 ,  H01L2224/08145 ,  H01L2224/8013 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: In an embodiment, a structure includes: a first device including a first dielectric layer and a first alignment mark in the first dielectric layer, the first alignment mark including a first magnetic cross, the first magnetic cross having a first north pole and a first south pole; and a second device including a second dielectric layer and a second alignment mark in the second dielectric layer, the second alignment mark including a second magnetic cross, the second magnetic cross having a second north pole and a second south pole, the first north pole aligned with the second south pole, the first south pole aligned with the second north pole, the first dielectric layer bonded to the second dielectric layer by dielectric-to-dielectric bonds, the first alignment mark bonded to the second alignment mark by metal-to-metal bonds.