公开(公告)号：US20240088842A1

公开(公告)日：2024-03-14

申请号：US18513103

申请日：2023-11-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Garming LIANG ,  Simon CHAI ,  Tzu-Jin YEH ,  En-Hsiang YEH ,  Wen-Sheng CHEN

IPC分类号： H03F3/21 ,  H01L27/06 ,  H01L27/092 ,  H03F1/02

CPC分类号： H03F3/211 ,  H01L27/0629 ,  H01L27/0928 ,  H03F1/0205 ,  H03F1/223

摘要： Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.

公开(公告)号：US20230112936A1

公开(公告)日：2023-04-13

申请号：US18081513

申请日：2022-12-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.,

发明人： Garming LIANG ,  Simon CHAI ,  Tzu-Jin YEH ,  En-Hsiang YEH ,  Wen-Sheng CHEN

IPC分类号： H03F3/21 ,  H01L27/06 ,  H01L27/092 ,  H03F1/02

摘要： Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.

公开(公告)号：US20200162041A1

公开(公告)日：2020-05-21

申请号：US16673765

申请日：2019-11-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Garming LIANG ,  Simon CHAI ,  Tzu-Jin YEH ,  En-Hsiang YEH ,  Wen-Sheng CHEN

IPC分类号： H03F3/21 ,  H01L27/06 ,  H01L27/092 ,  H03F1/02

摘要： Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.